q?v~zy??q?v?_ra]~?aqcabdq HFP5N80 2 1 3 bv dss = 800 v r ds(on) typ
i d = 5.0 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 30 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified to-220 1.gate 2. drain 3. source HFP5N80 800v n-channel mosfet symbol parameter value units v dss drain-source voltage 800 v i d drain current ? continuous (t c = 25 zq 5.0 a drain current ? continuous (t c = 100 zq 3.1 a i dm drain current ? pulsed (note 1) 20 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 450 mj i ar avalanche current (note 1) 5.0 a e ar repetitive avalanche energy (note 1) 14 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcfq 140 w 1.12 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q symbol parameter typ. max. units r jc junction-to-case -- 0.89 `?q r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 may 2013
q?v~zy??q?v?_ra]~?aqcabdq HFP5N80 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=34mh, i as =5.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |